Samsung to Invest $7 Billion in China Flash-Memory Production

Geronimo Vena
Agosto 29, 2017

Although Samsung Electronics explained that this was a "planned investment", focus is on the fact that Samsung Electronics made this decision after three days removed from Vice-Chairman Lee Jae-yong receiving decisions from ruling of the first trial.

Samsung Electronics said on August 28 it will invest US$7 billion for the construction of a second NAND flash memory chip plant in Xian, China, over the next three years.

The company's board on Monday approved the first batch worth $2.3 billion for the new investment, the regulatory filing said. Primary line is now on full operation and its production capacity is about 100,000 wafers per month based on investment into wafers.

Samsung's Xian facilities produce 3-D NAND flash memory chips whose demand is rapidly rising as mobile device manufacturers want chips with greater data storage space and faster processing capabilities.

"Because NAND flash memory is now at an extreme short supply, extensions are necessary." said a different representative.

Samsung Electronics announced on July 4 that the company announced the plan to additionally invest in a semiconductor line of Xian while holding a ceremony to mark product shipments at the Pyeongtaek semiconductor production line in Gyeonggi Province, Korea. Actual confirmed amount is $7.23 million (8.09095 billion KRW).

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